IBM 193nm Semiconductor Resist: Material Properties, Resist Characteristics and Lithographic Performance.
نویسندگان
چکیده
منابع مشابه
Effects of photoacid generator incorporation into the polymer main chain on 193nm chemically amplified resist behavior and lithographic performance
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ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 1999
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.12.493